By Ana Paula Pinto Correia, Pedro Miguel Cândido Barquinha, João Carlos da Palma Goes
This books discusses the layout, electric simulation and structure of a 2nd-order ∑∆ analog-to-digital converter (ADC), utilizing oxide thin-film transistors (TFTs) know-how. The authors supply a unified view of fabrics technology and electronics engineering, so one can consultant readers from either fields via key subject matters. to complete this aim, historical past concerning fabrics, machine physics, characterization options, circuit layout and structure is given including an in depth dialogue of experimental facts. the ultimate simulation effects essentially exhibit the opportunity of the proposed circuit-level options, which allows the implementation of sturdy and effort effective ADCs in keeping with oxide TFTs, for reasonable resolutions and conversion-rates.
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Additional info for A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs
It is noteworthy that all measurements are done in the dark, at room temperature, using a semiconductor parameter analyzer and a probe station. Stress Measurements Stress measurements provide information about the degradation mechanisms of the transistors and consequently if they are suitable for integration in circuits. Constant gate voltage is one of the most common methodologies, where the basic idea is to apply a constant voltage to the gate electrode and maintain the drain and source electrodes grounded.
However, this configuration is restricted to conductive targets (insulating materials are not able to maintain the “glow discharge”). 56 MHz) and, consequently, the “glow discharge” is preserved, regardless the target electrical conductivity [2, 3]. Nevertheless, in both sputtering configurations mentioned above the deposition rate is low and the electron bombardment can structurally damage the substrate and/or the growing film. To solve these problems magnetron sputtering is used. 1 Fabrication and Characterization Routes 19 Anode Substrate Substrate-target distance Target Cathode To vacuum pump Fig.
The evaluation of contact resistance is also imperative, as this has to be taken into account when designing the circuits. 2 Amorphous Multicomponent High-› Dielectrics Based on Ta2 O5 and SiO2 35 Fig. 8 Output characteristics of IGZO TFTs with Mo electrodes, using TSiO as dielectric layer ( 200 nm), annealed at 200 ı C. Inset shows magnification of linear regime the inset of Fig. 8, there are no current crowding effects at low VDS and the amplitude of the IDS is considerably high. 5 eV, respectively, the Schottky barrier can be negligible, which means that this contact has a high efficiency of injection and, as a consequence, good electrical properties are obtained .