A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs by Ana Paula Pinto Correia, Pedro Miguel Cândido Barquinha,

By Ana Paula Pinto Correia, Pedro Miguel Cândido Barquinha, João Carlos da Palma Goes

This books discusses the layout, electric simulation and structure of a 2nd-order ∑∆ analog-to-digital converter (ADC), utilizing oxide thin-film transistors (TFTs) know-how. The authors supply a unified view of fabrics technology and electronics engineering, so one can consultant readers from either fields via key subject matters. to complete this aim, historical past concerning fabrics, machine physics, characterization options, circuit layout and structure is given including an in depth dialogue of experimental facts. the ultimate simulation effects essentially exhibit the opportunity of the proposed circuit-level options, which allows the implementation of sturdy and effort effective ADCs in keeping with oxide TFTs, for reasonable resolutions and conversion-rates.

Show description

Read Online or Download A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs PDF

Best nonfiction_13 books

China's Economic Dynamics: A Beijing Consensus in the making?

Even supposing chinese language monetary development keeps powerful, and even supposing China coped rather well with the new worldwide concern, the chinese language financial system faces many demanding situations, together with tips on how to maintain development, tips on how to rebalance the economic climate in the direction of extra household intake, easy methods to accommodate emerging wages, becoming social and local inequality, and the way to reform monetary and financial regulations.

It's a Stick-Up: 20 Real Wheat Paste-Ups from the World's Greatest Street Artists

This can be the 1st e-book to examine an more and more renowned type of highway paintings: the "wheatie" or wheat paste-up. Many road artists do not graffiti or stencil to any extent further yet use pre-prepared paper photos that may be taken down, thereby heading off a vandalism cost. The ebook will convey the paintings of 20 artists, with images in their paintings, a piece of writing approximately their paintings, and a fold-out paste-up.

Sylvia Pankhurst: From Artist to Anti-Fascist

This is often the biography of Sylvia Pankhurst. A promising paintings scholar, she turned eager about the Suffragette circulate and used to be particularly willing to take the reason to the East finish of London. a lot of her lifestyles used to be dedicated to the explanations of anti-fascism, anti-imperialism and the independence of Ethiopia.

Additional info for A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs

Example text

It is noteworthy that all measurements are done in the dark, at room temperature, using a semiconductor parameter analyzer and a probe station. Stress Measurements Stress measurements provide information about the degradation mechanisms of the transistors and consequently if they are suitable for integration in circuits. Constant gate voltage is one of the most common methodologies, where the basic idea is to apply a constant voltage to the gate electrode and maintain the drain and source electrodes grounded.

However, this configuration is restricted to conductive targets (insulating materials are not able to maintain the “glow discharge”). 56 MHz) and, consequently, the “glow discharge” is preserved, regardless the target electrical conductivity [2, 3]. Nevertheless, in both sputtering configurations mentioned above the deposition rate is low and the electron bombardment can structurally damage the substrate and/or the growing film. To solve these problems magnetron sputtering is used. 1 Fabrication and Characterization Routes 19 Anode Substrate Substrate-target distance Target Cathode To vacuum pump Fig.

The evaluation of contact resistance is also imperative, as this has to be taken into account when designing the circuits. 2 Amorphous Multicomponent High-› Dielectrics Based on Ta2 O5 and SiO2 35 Fig. 8 Output characteristics of IGZO TFTs with Mo electrodes, using TSiO as dielectric layer ( 200 nm), annealed at 200 ı C. Inset shows magnification of linear regime the inset of Fig. 8, there are no current crowding effects at low VDS and the amplitude of the IDS is considerably high. 5 eV, respectively, the Schottky barrier can be negligible, which means that this contact has a high efficiency of injection and, as a consequence, good electrical properties are obtained [17].

Download PDF sample

Rated 4.45 of 5 – based on 9 votes