By Zhiqiang Li
This publication frequently specializes in decreasing the excessive parasitic resistance within the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) procedure, P and Sb co-implantation process and a number of Implantation and a number of Annealing (MIMA) procedure, the electron Schottky barrier peak of NiGe/Ge touch is modulated to 0.1eV, the thermal balance of NiGe is greater to six hundred℃ and the touch resistivity of metal/n-Ge touch is tremendously diminished to 3.8×10−7Ω•cm2, respectively. along with, a discounted source/drain parasitic resistance is verified within the fabricated Ge nMOSFET. Readers will locate invaluable information regarding the source/drain engineering approach for high-performance CMOS units at destiny expertise node.
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This publication usually specializes in lowering the excessive parasitic resistance within the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) method, P and Sb co-implantation approach and a number of Implantation and a number of Annealing (MIMA) approach, the electron Schottky barrier top of NiGe/Ge touch is modulated to zero.
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Extra info for The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
16 gives the I–V characteristics of NiGe/n-Ge (100) Schottky diodes with Se implantation as a function of annealing temperature. It can be seen that the reverse current of NiGe/n-Ge (100) Schottky diodes gradually increases by increasing the annealing temperature (from 350 to 500 °C), and well ohmic charac‐ teristic with rectiﬁcation ratio close to 1 is obtained when the annealing temperature is 450 °C, indicating the eﬀective SBH modulation of the NiGe/Ge contact. 50eV 20 10 Ohmic Contact 0 350 400 450 500 Temperature (oC) Fig.
Then, 50 nm of SiO2 was depos‐ ited and etched to form a sidewall. After precleaning of Ge wafers, 20 nm Ni was sputtered and followed by rapid thermal annealing at 400 °C in nitrogen ambient to form a NiGe ﬁlm. The unreacted Ni was removed by HCl/H2O solution. The P dopants (50 keV, 1 × 1015 cm−2) and Sb dopants (65 keV, 1 × 1015 cm−2) were then implanted in the metal S/D regions. The drive-in annealing was carried out at 500 °C for 60 s in N2 for dopants segregated at the NiGe/p-Ge interface.
Wittmer M, Seidel T (2008) The redistribution of implanted dopants after metal-silicide formation. J Appl Phys 49:5827–5834 25. Sze S, Irvin J (1968) Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300 K. Solid-State Electron 11:599–602 26. Tong Y, Liu B, Lim PSY, Yeo Y-C (2012) Selenium segregation for eﬀective Schottky barrier height reduction in NiGe/n-Ge contacts. IEEE Electron Device Lett 33:773–775 27. Ikeda K, Yamashita Y, Sugiyama N, Taoka N, Takagi SI (2006) Modulation of NiGe/Ge Schottky barrier height by sulfur segregation during Ni germanidation.